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发明授权
CN106062925B 霍尔效应增强电容耦合等离子体源、消除系统及真空处理系统 有权

霍尔效应增强电容耦合等离子体源、消除系统及真空处理系统
摘要：
本文中公开的实施方式包括消除系统，所述消除系统用于消除在半导体工艺中产生的化合物。消除系统包括等离子体源，所述等离子体源具有第一板件及平行于第一板件的第二板件。电极安置于第一板件与第二板件之间，且外壁安置于第一板件与第二板件之间，所述外壁围绕所述电极。等离子体源具有安置于第一板件上的第一多个磁体，及安置于第二板件上的第二多个磁体。由第一多个磁体及第二多个磁体产生的磁场大体上垂直于在电极与外壁之间产生的电场。在此配置中，产生密集等离子体。
摘要（英）：

Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes a plasma source that has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.

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