The invention discloses a solar cell based on an oxygen-doping zinc telluride nanowire array. The solar cell comprises an n-type AZO transparent conducting thin film coaxially coated with a zinc oxide layer, an oxygen-doping zinc telluride layer and a zinc telluride layer at the top end of the nanowire array, the nanowire array coaxially coated with the zinc oxide layer, the oxygen-doping zinc telluride layer and the zinc telluride layer, a PMDS supporting layer coated at the bottom end of the nanowire and a p-type doping high-conductivity monocrystalline silicon layer substrate from top to bottom in sequence; the nanowire array coaxially coated with the zinc oxide layer, the oxygen-doping zinc telluride layer and the zinc telluride layer with intermediate area characteristics are used as a photoelectric absorption layer; and electrodes are led out on the AZO transparent conducting thin film and the p-type doping high-conductivity monocrystalline silicon layer respectively.