The invention discloses a nanorod structure organic field effect transistor storage unit and a preparation method therefor, and relates to the technical field of storage units in the semiconductor industry and the technical field of biological membranes. The storage unit provided by the invention comprises source-drain electrodes, an organic semiconductor layer, a second-type gate insulation layer, a first-type gate insulation layer, a gate electrode, and a substrate. A nanorod film layer is disposed between the organic semiconductor layer and the second-type gate insulation layer. The beneficial effects of the invention are that a nanorod film with the controllable shape and appearance is prepared through the simple technology of spin coating; the storage performance of a device is improved, and the storage capacity, speed and stability and repeated erasing reliability of the device are improved greatly; the manufacture cost of the device is reduce; and the storage unit is great in industrial application value.