The invention discloses a metal oxide semiconductor field effect transistor. The metal oxide semiconductor field effect transistor comprises a substrate (9) and a channel layer (7) from the bottom up, wherein a source region (5) and a drain region (6) are arranged at the two ends of the channel layer (7); a source electrode (1) and a drain electrode (3) are arranged right above the source region and the drain region respectively; a gate oxide layer (4) is arranged between the source electrode and the drain electrode; a gate electrode (2) is arranged right above the gate oxide layer, wherein a buffer layer (8) is additionally arranged between the substrate and the channel layer; the buffer layer (8) adopts a GaAs material; the channel layer (7) adopts an In<0.53>Ga<0.47>As material; the doping material is boron or phosphorus; the doping concentration is 10<15>-10<17>cm<-3>; and the gate oxide layer (4) adopts a high-K material with a dielectric constant which is greater than 3.9. According to the metal oxide semiconductor field effect transistor, the interface trapping charge between the channel layer and the high-K gate oxide layer is reduced; the electrical performance degradation phenomenon of the metal oxide semiconductor field effect transistor is reduced; and the metal oxide semiconductor field effect transistor can be applied to the manufacturing of large-scale integrated circuits.