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发明公开
CN106129211A 具有嵌入式透明扩展电极结构的发光二极管及其制备方法 无效 - 撤回

具有嵌入式透明扩展电极结构的发光二极管及其制备方法
摘要：
本发明公开了一种具有嵌入式透明扩展电极结构的发光二极管及其制备方法，在GaAs衬底的上面依次设置的缓冲层、布拉格反射层、n‑AlGaInP限制层、MQW多量子阱有源层、p‑AlGaInP限制层、p‑GaP窗口层、ITO电流扩展层和AlGaInP粗化层，在图案化的AlGaInP粗化层上设有金属电极层，在GaAs衬底的下面设有背电极层，所述金属电极层包括主电极和扩展电极，其中：主电极连接在图案化的AlGaInP粗化层上，扩展电极嵌入在图案化的AlGaInP粗化层中，并且与ITO电流扩展层保持连接。扩展电极自身因为其嵌入式结构的特点，因而稳定性好，从而提高了整个金属电极层的附着性和完整性，确保了发光二极管的工作电压稳定，提高了产品的焊线可靠性和发光效率，极大地提升了产品的质量和良率。
摘要（英）：

The invention discloses a light emitting diode having an embedded transparent expansion electrode structure and a manufacturing method thereof. A buffer layer, a Bragg reflection layer, an n-AlGaInP limit layer, an MQW multi-quantum well active layer, a p-AlGaInP limit layer, a p-GaP window layer, an ITO current expansion layer and an AlGaInP coarsening layer are sequentially arranged on a GaAs substrate, wherein the patterned AlGaInP coarsening layer is provided with a metal electrode layer, a back electrode layer is arranged below the GaAs substrate, the metal electrode layer comprises a main electrode and an expansion electrode, the main electrode is connected with the patterned AlGaInP coarsening layer, and the expansion electrode is embedded in the patterned AlGaInP coarsening layer and is connected with the ITO current expansion layer. The expansion electrode having an embedded structure has property of good stability, so adhesiveness and integrity of the integral metal electrode layer are improved, stability of a work voltage of an LED is guaranteed, welding reliability and light emitting efficiency of products are improved, and quality and the yield of the products are greatly improved.

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