The invention discloses a development uniformity detection method. The development uniformity detection method comprises the following steps: presetting an exposure mode: setting positions of multiple exposure arrays on a photoetching machine, and carrying out exposure on the exposure arrays by virtue of same exposure energy, wherein the exposure arrays are formed through ordered arrangement of multiple exposure cells; gelatinizing, exposing and developing a printed wafer; putting the printed wafer coated with photoresist into the photoetching machine, exposing the printed wafer by virtue of the preset exposure mode, and carrying out development; and determining development uniformity: calculating an intermediate development capacity value of each exposure array according to the number of white exposure cells in each exposure array, and making comparison on the intermediate development capacity values of the exposure arrays at different positions, so as to finish the determination of the development uniformity, wherein the intermediate development capacity value is equal to the average value of exposure energy values corresponding to the white exposure cells. The development uniformity detection method has the beneficial effects that the operation is simple, and the detection efficiency of the development uniformity is effectively improved.