The invention relates to an oxidated-glass-passivated semiconductor device which takes aluminosilicate as a fundamental component, e.g., PbO- or ZnO-aluminosilicate. The oxidated-glass-passivated semiconductor device is characterized in that in order to improve the reliability of the semiconductor device under the conditions of reverse bias and high stress, the semiconductor device contains a glass-passivated subsurface layer, wherein the glass-passivated subsurface layer forms 5% of thickness of glass of a glass-passivated semiconductor and contains cesium, of which the surface concentration is 8*10<18>cm<-3> to 9*10<19>cm<-3>.