The invention discloses a flexible pyramid array GaN-based semiconductor light-emitting diode and a manufacturing method therefor, and belongs to the technical field of a semiconductor. A pyramid structure is directly grown on a sapphire substrate through laser drilling, so that the operation is simple and convenient, and a formed 3D pore structure can be used for reducing dislocation and stress; in addition, the mutually separated pyramid arrays provide probability to realization of an inorganic flexible LED; by depositing a transparent conductive thin film, the distribution uniformity of the current on the p-surface pyramid is ensured; the gap between the pyramids is filled with an insulating material, so that the leveling of the pyramids is realized; electrical connection between the pyramids is realized by adopting graphene and other novel materials; meanwhile, two steps of graphene transferring and substrate transferring are combined into one step, so that the completeness of the graphene is ensured while the process is simplified; and lug bosses on the back surface of the pyramid structure which is grown in the laser drilling manner is utilized creatively, so that partial photoetching, side wall protection of a quantum well, and u-GaN etching can be realized without requiring a mask.