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发明授权
CN106340517B 一次编程非挥发性存储胞 有权

一次编程非挥发性存储胞
摘要：
本发明公开一次编程非挥发性存储胞，包括一具单栅极结构的一第一浮动栅晶体管、一隔离晶体管与一选择晶体管。第一浮动栅晶体管的第一端连接至该第二控制线。第一浮动栅晶体管的浮动栅极为浮接。隔离晶体管的第一端连接至第一浮动栅晶体管的第二端。隔离晶体管的隔离栅极连接至隔离线。选择晶体管的第一端连接至隔离晶体管的第二端。选择晶体管的第二端连接至第一控制线。选择晶体管的选择栅极连接至字符线。
摘要（英）：

A one time programming non-volatile memory cell includes a first floating gate transistor with a single gate structure, an isolation transistor, and a select transistor. A first terminal of the first floating gate transistor is connected with a second control line. A floating gate of the first floating gate transistor is in a floating state. A first terminal of the isolation transistor is connected with a second terminal of the first floating gate transistor. An isolation gate of the isolation transistor is connected with an isolation line. A first terminal of the select transistor is connected with a second terminal of the isolation transistor. A second terminal of the select transistor is connected with a first control line. A select transistor of the select transistor is connected with a word line.

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