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发明公开
CN106463504A 半导体装置以及半导体装置的制造方法 有权

半导体装置以及半导体装置的制造方法
摘要：
在IGBT部(21)中，发射电极(8)通过埋入到第1接触孔(9a)的接触插塞(14)与n+型发射区(3)、发射电极(8)和层间绝缘膜(9)从IGBT部(21)起遍及FWD部(22)而设置。在FWD部(22)中，发射电极(8)被埋入到第2接触孔(9b)并与p型基区(2)直接连接。FWD部(22)的沟槽(3)的间距W(12)大于IGBT部(21)的沟槽(3)的间距(W11)。第2接触孔(9b)的宽度(W22)大于第1接触孔(9a)的宽度(W21)。由此，在谋求微细化的沟槽栅型的RC-IGBT中能够实现良好的二极管特性。(6)和p+型接触区(7)电连接。p型基区(2)、沟槽
摘要（英）：

In the present invention, in an IGBT section (21), an emitter electrode (8) is electrically connected to an n+-type emitter region (6) and a p+-type contact region (7) via contact plugs (14) embedded into first contact holes (9a). A p-type base region (2), trenches (3), the emitter electrode (8), and an interlayer insulation film (9) are provided spanning from the IGBT section (21) to an FWD section (22). In the FWD section (22), the emitter electrode (8) is embedded into a second contact hole (9b) and directly connected to the p-type base region (2). A pitch W (12) of the trenches (3) of the FWD section (22) is wider than a pitch (W11) of the trenches (3) of the IGBT section (21). A width (W22) of the second contact hole (9b) is greater than a width (W21) of the first contact holes (9a). Due to this configuration, it is possible to realize favorable diode properties in a miniaturized trench/gate-type RC-IGBT.

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