利索-全球专利检索

  1. 登录
  2. 注册
发明授权
CN106486572B 发光二极管芯片 有权

发光二极管芯片
摘要：
本发明提供一种发光二极管芯片，包括半导体元件层、凹陷部、第一电极、以及第二电极。半导体元件层包括第一型掺杂半导体层、量子井层以及第二型掺杂半导体层。凹陷部在发光二极管芯片上定义出第一区域以及第二区域。第一区域以及第二区域分别包含部分第一型掺杂半导体层、部分量子井层以及部分第二型掺杂半导体层。第一电极配置于第一区域内且至少位在部分第一型掺杂半导体层与至少部分第二型掺杂半导体层上。第二电极位于第二区域内并与第二型掺杂半导体层电性连接。另一种发光二极体晶片亦被提供。本发明提供的发光二极管芯片具有较高的发光效率。
摘要（英）：

A light-emitting diode including a semiconductor epitaxial layer, a first electrode, and a second electrode is provided. The semiconductor epitaxial layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a quantum well layer. A recessed portion is formed in the semiconductor epitaxial layer. The recessed portion separates the second-type doped semiconductor layer, the quantum well layer, and a portion of the first-type doped semiconductor layer and defines a first region and a second region on the semiconductor epitaxial layer. The first electrode is located in the first region and electrically connected to at least a portion of the first-type doped semiconductor layer and at least a portion of the second-type doped semiconductor layer. The second electrode is located in the second region and electrically connected to the second-type doped semiconductor layer.

公开/授权文献
0/0