The invention relates to a semiconductor device, a preparation method therefor, and an electronic device. The method comprises the following steps: S1, providing a semiconductor substrate, and forming a bottom electrode on the semiconductor substrate; S2, depositing a variable resistance material layer on the bottom electrode, and selecting a perfluorinated compound for in-situ cleaning in a deposition process, so as to reduce the content of oxygen in the variable resistance material layer. The method can control the content of oxygen in the variable resistance material layer, so as to accord with the demands of an RRAM (Resistive Random Access Memory). The method is simple and easy, can control the content of oxygen in the variable resistance material layer, and further improves the performance and yield of the RRAM.