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发明授权
CN106591922B 一种Cu2O纳米薄膜的制备方法 有权 转让

一种Cu2O纳米薄膜的制备方法
摘要：
本发明公开了一种Cu2O纳米薄膜的制备方法。配制含0.0244~0.1220mol/L CuSO4、0.0006~0.0122mol/L十六烷基三甲基溴化铵(CTAB)、0.0244~0.0854mol/L N2H4.H2O、0.0390~0.1951mol/L NaOH四种溶液的电解液，在匀速磁力搅拌下，以Cu片作阳极，Pt片作阴极，在5V~20V电压下氧化5~15分钟，即在Cu片上获得光电压值0.0985V~0.3035V的Cu2O纳米薄膜。本发明对原料及仪器要求不高、工艺简单、周期非常短，制备的样品光电性能优良。
摘要（英）：

The invention discloses a preparation method of a Cu2O nano-film. The method comprises the steps that an electrolyte containing 0.0244-0.1220 mol/L of CuSO4, 0.0006-0.0122 mol/L of cetyl trimethyl ammonium bromide(CTAB), 0.0244-0.0854 mol/L of H4N2.H2O, 0.0390-0.1951 mol/L of NaOH is obtained, under constant-speed magnetic stirring, by taking a Cu sheet as an anode and taking a Pt sheet as a cathode, oxidation is conducted for 5-15 min at the voltage of 5-20 V, and then the Cu2O nano-film with the photovoltage value ranging from 0.0985 V to 0.3035 V is obtained on the Cu sheet. According to the preparation method, requirements on the raw materials and instruments are low, the technology is simple, the period is very short, and a prepared sample is excellent in photoelectric property.

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