The invention relates to a 3G radio frequency power amplifier circuit which comprises a first level amplifying structure and a second level amplifying structure, wherein the second level amplifying structure is connected with the first level amplifying structure through an inter-level matching circuit; the first level amplifying structure comprises a radio frequency amplifier tube T1, an input matching circuit and an amplifier tube T1 biasing circuit; the input matching circuit is matched with the radio frequency amplifier tube T1; the amplifier tube T1 biasing circuit is matched with the radio frequency amplifier tube T1; the second level amplifying structure comprises a radio frequency amplifier tube T2, an output matching circuit and an amplifier tube T2 biasing circuit; the output matching circuit is matched with the radio frequency amplifier tube T2; and the amplifier tube T2 biasing circuit is matched with the radio frequency amplifier tube T2. The first level amplifying structure is connected with the second level amplifying structure through the inter-level matching circuit and an SMD capacitor or an SMD inductor is not applied to the input matching circuit of the first level amplifying structure, the output matching circuit of the second level amplifying structure and the inter-level matching circuit, so that the packaging capacity can be effectively increased, the packaging cost can be lowered, the adaptation of the packaging is increased and the packaging is safe and reliable.