This silicon carbide semiconductor device (1) comprises a silicon carbide substrate (10), a gate insulating film (15), a gate electrode (27) and an interlayer insulating film (2). The silicon carbide substrate (10) has a main surface (10a). The gate insulating film (15) is provided on the main surface (10a) of the silicon carbide substrate (10). The gate electrode (27) is provided on the gate insulating film (15). The interlayer insulating film (2) is provided so as to cover the gate electrode (27). The interlayer insulating film (2) comprises: a first insulating film (2a) that is in contact with the gate electrode (27) and contains silicon atoms, while not containing neither phosphorus atoms nor boron atoms; a second insulating film (2b) that is provided on the first insulating film (2a) and contains phosphorus atoms and/or boron atoms in addition to silicon atoms; and a third insulating film (2c) that contains silicon atoms but does not contain neither phosphorus atoms nor boron atoms. The second insulating film (2b) has a first surface (2b1) that is in contact with the first insulating film (2a), a second surface (2b2) that is on the reverse side of the first surface (2b1), and a third surface (2b3) that connects the first surface (2b1) and the second surface (2b2) with each other. The third insulating film (2c) is in contact with the second surface (2b2) and/or the third surface (2b3).