The present invention provides a semiconductor device and a method for manufacturing the same. The semiconductor device comprises a substrate, an epitaxial layer, a first conductive type first bottom doping region, a first conductive type first top doping region, at least one second conductive type first doping region, a first conductive type body region, a first conductive doping region, a source electrode region, a drain electrode region, a grid electrode, a source electrode and a drainage electrode. The substrate comprises a high side region, a low side region and an isolation region. The isolation region comprises a level shift region and a connection region. The first conductive type first bottom doping region is arranged in the connection region. The first conductive type first top doping region is arranged in the connection region and in direct contact with the first conductive type first bottom doping region. The at least one second conductive type first doping region is arranged in the first conductive type first top doping region or the first conductive type first bottom doping region.