The invention discloses a SiC transistor device integrated with a current sensor. On one side of the source electrode of the SiC transistor device, a plurality of primitive cells in an active region are uniformly selected according to a set proportion, and are used as source sensors, and other primitive cells are used as the primitive cells of the device source electrode, namely, main primitive cells. The multi-layer wiring way of the source electrode is adopted, and then the briquette metal of the source electrode and the briquette metal of the source sensors are disposed in the same plane. The grids of the source sensors are connected with the grid of the SiC transistor device, and the above mentioned grids share the briquette metal of the grid, and share a drain electrode. Current of a chip is monitored in a real-time manner, and a current state in the whole chip is comprehensively reflected, and then real-time accurate data is acquired, and therefore timely control protection of a system is facilitated.