The invention discloses a two-dimensional super-junction like LDMOS device and a manufacturing method thereof. On one hand, the device replaces a conventional planar gate with a slotted gate, extends a drain heavily doped region to the same depth as a drift region so that the a P pillar and a N pillar in the drift region super-junction are connected with a low potential and a high potential respectively, thus a PN junction is more likely to be depleted in a reverse electric field. On the other hand, a variable doping idea is introduced into the new structure, the P pillar region in the drift region is subjected to step doping and the doping concentration gradually decreases from a source to a drain. The two-dimensional super-junction like LDMOS structure of the novel step-doped P pillar region can eliminate a substrate-assisted depletion effect, balances the charges in the drift region, and maintains a good on-state characteristic while increasing device breakdown voltage while. The two-dimensional super-junction like LDMOS device is simple in process and easy to manufacture, and can further reduce production cost.