The invention discloses a high-power eutectic solder inversion structure for an ultraviolet LED chip. The high-power eutectic solder inversion structure mainly comprises an LED chip, a silica gel layer, a packaging adhesive layer, a lens, an antireflection film, reflection cups, a miniature PCB substrate, copper layers, conductive and heat-conducting adhesive layers and bonding pads, wherein the PCB substrate comprises an upper surface layer, a middle layer and a lower surface layer; a groove is arranged in the middle of the upper surface layer of the substrate; and a second copper layer, an SiC layer and a second heat-conducting adhesive layer are sequentially arranged in the groove from bottom to top. Better light transmission and heat dissipation effects are obtained through improving the order of various layers of the substrate and the interlayer structures, and meanwhile, the halo phenomenon is avoided to the maximum extent. Electrode strips are also arranged at two ends of the substrate, and meanwhile, the structure of the miniature PCB substrate is improved, thereby assisting the chip in dissipating heat; and a solid heat emission hole filled with copper is arranged between the upper surface layer and the lower surface layer, thereby accelerating heat loss. The high-power eutectic solder inversion structure also has the advantages of being reasonable in structure, low in technological requirements, easy to produce, high in yield and high in light extracting rate.