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Invention Publication
CN106971962A 半导体制造设备及用于处理晶圆的方法 无效 - 撤回

半导体制造设备及用于处理晶圆的方法
Abstract:
本发明的实施例提供了一种半导体制造设备，包括处理室、至少一个反射器和至少一个电磁波发射器件。反射器存在于处理室中。在处理室中，电磁波发射器件存在于反射器与晶圆之间。电磁波发射器件配置为向晶圆发射电磁波光谱。关于电磁波光谱，反射器具有对于Al2O3的相对反射率，并且反射器的相对反射率在从约70％至约120％的范围内。本发明的实施例还提供了一种用于处理晶圆的方法。
Abstract(English):

A semiconductor manufacturing equipment includes a processing chamber, at least one reflector and at least one electromagnetic wave emitting device. The reflector is present in the processing chamber. The electromagnetic wave emitting device is present between the reflector and a wafer in the processing chamber. The electromagnetic wave emitting device is configured to emit a spectrum of electromagnetic wave to the wafer. The reflector has a relative reflectance to Al2O3 with respect to the spectrum of electromagnetic wave, and the relative reflectance of the reflector is in a range from about 70% to about 120%. The embodiment of the invention also provides a method for processing a wafer.

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