The invention discloses a process for direct imaging growth of graphene on an insulation substrate, and belongs to the field of preparation of graphene materials. The graphene directly grows on the insulation substrate; and the imaging growth of the graphene is performed on the basis. A layer of copper is firstly plated on the insulation substrate as a catalyst; then, the graphene grows on the surface of the plated copper under catalyst of the copper; the high-temperature annealing is kept to volatilize the copper; and after the copper is volatilized, the graphene can fall to the surface of the insulation substrate to achieve the purpose of directly growing the graphene on the insulation substrate. Based on direct growth, the plated copper has a certain patterns through a photolithography process; and correspondingly, the graphene growing on the copper also has the same patterns to achieve the purpose of direct imaging growth of the graphene on the insulation substrate. The process prevents damage of the graphene in a graphene transfer process through the direct growth process, is lower in cost, and is suitable for large-scale batch production of the graphene.