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发明公开
CN107068812A 基于c面SiC衬底的c面Ⅲ族氮化物的发光二极管 有权

基于c面SiC衬底的c面Ⅲ族氮化物的发光二极管
摘要：
本发明公开了一种基于c面SiC衬底的c面Ⅲ族氮化物的发光二极管，主要解决现有LED生长步骤多，工艺周期长的问题。其自下而上包括：c面SiC衬底层、AlN成核层、发光层和电极，其中AlN成核层由Ⅴ/Ⅲ比为15000‑23000的高Ⅴ/Ⅲ比AlN成核层条纹和Ⅴ/Ⅲ比为800‑1200的低Ⅴ/Ⅲ比AlN成核层条纹交错组成，发光层为一层c面Ⅲ族氮化物薄膜，由N面Ⅲ族氮化物条纹和金属面Ⅲ族氮化物条纹交错组成。该Ⅲ族氮化物采用GaN或InGaN，分别发紫外光和绿光。本发明利用c面Ⅲ族氮化物内的反型畴代替传统LED的量子阱发光，简化了器件结构和制作流程，缩短了工艺周期，可用于照明，显示屏和背光源。
摘要（英）：

The invention discloses a light emitting diode based on C-plane group-III nitride of a C-plane SiC substrate, and mainly aims to solve the problem that the existing LED has many growth steps and a long process cycle. The light emitting diode comprises, from bottom to top, a C-plane SiC substrate layer, an AlN nucleation layer, a luminous layer, and electrodes. The AlN nucleation layer is composed of high-V/III-ratio (15000:23000) AlN nucleation layer stripes and low-V/III-ratio (800:1200) AlN nucleation layer stripes arranged alternately. The luminous layer is a C-plane group-III nitride film, and is composed of N-plane group-III nitride stripes and metal-plane group-III nitride stripes arranged alternately. The group-III nitride is GaN or InGaN, which emits ultraviolet light or green light. Light is emitted through the anti-phase domain boundary in the C-plane group-III nitride instead of the quantum well in the traditional LED. The device structure and the manufacture process are simplified. The process cycle is shortened. The light emitting diodes can be used for lighting and used in displays and backlight sources.

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