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发明授权
CN107068855B 用于磁阻存储器的间隔层 有权

用于磁阻存储器的间隔层
摘要：
本发明揭示用于磁阻存储器的间隔层，其具有高TMR的底部钉扎垂直磁隧道结(pMTJ)，可耐受高温后端工艺制程。该pMTJ包含在该pMTJ的固定磁层的SAF层和参考层之间的复合间隔层。该复合间隔层包含第一非磁(NM)间隔层，设于该第一NM间隔层上方的磁(M)间隔层，及设于该M层上方的第二NM间隔层。该M层为磁连续非晶层，其提供对于参考层的良好模板。
摘要（英）：

A bottom pinned perpendicular magnetic tunnel junction (pMTJ) with high TMR which can withstand high temperature back-end-of-line (BEOL) processing is disclosed. The pMTJ includes a composite spacer layer between a SAF layer and a reference layer of the fixed magnetic layer of the pMTJ. The composite spacer layer includes a first non-magnetic (NM) spacer layer, a magnetic (M) spacer layer disposed over the first NM spacer layer and a second NM spacer layer disposed over the M layer. The M layer is a magnetically continuous amorphous layer, which provides a good template for the reference layer.

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