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发明公开
CN107075726A SiC单晶的制造方法和SiC单晶的制造装置 无效 - 撤回

SiC单晶的制造方法和SiC单晶的制造装置
摘要：
本发明提供即使在长时间地进行晶体生长的情况下也能够减少Si－C溶液的温度偏差的、SiC单晶的制造方法。本实施方式的SiC单晶的制造方法包括以下工序：准备工序，在该准备工序中，准备制造装置(100)，该制造装置(100)包括容纳有Si－C溶液的原料的坩埚(7)、在下端安装有晶种(9)的晶种轴(41)、以及在中央具有供晶种轴(41)穿过的通孔(60A)且能够配置于坩埚(7)内的中盖(60)；生成工序，在该生成工序中，对坩埚(7)内的原料进行加热而生成Si－C溶液(8)；生长工序，在该生长工序中，使晶种(9)与Si－C溶液(8)相接触，从而在晶种(9)上制造SiC单晶；以及中盖调整工序，在生长工序中实施该中盖调整工序，使中盖(60)和坩埚(7)中的任一者相对于另一者在高度方向上相对移动，从而将中盖(60)与Si－C溶液(8)之间的高度方向距离的变动幅度调整到第1基准范围内。
摘要（英）：

Provided is an SiC single crystal production method allowing a temperature variation to be reduced in an Si-C solution even when a crystal growth is being carried out over a long time period. The SiC single crystal production method according to this embodiment comprises: a preparation step for preparing a production device (100) equipped with a crucible (7) in which raw materials for the Si-C solution are contained, a seed shaft (41) that has a seed crystal (9) attached to the lower extremity thereof, and an internal lid (60) capable of being positioned inside the crucible (7)and having a through-hole (60A) in the center, wherethrough the seed shaft (41) passes; a generation step for heating the raw materials inside the crucible (7) to generate the Si-C solution (8); a growth step for bringing the seed crystal (9) into contact with the Si-C solution (8) so as to produce the SiC single crystal over the seed crystal (9); and an internal lid adjustment step for displacing during the growth step one of the internal lid (60) and the crucible (7) relative to one another in the height direction whereby the range of the variation in the distance between the internal lid (60) and the Si-C solution (8) in the height direction is adjusted to be within a first reference range.

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