利索-全球专利检索

  1. 登录
  2. 注册
发明公开
CN107240563A 衬底处理装置及半导体器件的制造方法 有权 转让

衬底处理装置及半导体器件的制造方法
摘要：
本发明涉及衬底处理装置及半导体器件的制造方法。提供一种能够提高所形成的膜的膜质的技术。具有：处理室，对衬底进行处理；气体供给部，设置于处理室内，供给对衬底进行处理的处理气体；等离子体产生部，设置于处理室内，使处理气体活化；和缓冲部，形成用于收纳等离子体产生部的至少一部分的缓冲室，且具有对衬底供给活化后的处理气体的气体供给孔，缓冲部具有将气体供给孔的一部分切去而形成的槽部。
摘要（英）：

In a process chamber in which a substrate is processed, a gas supply unit is in the process chamber and configured to supply a process gas that processes the substrate. A plasma generation unit is in the process chamber and configured to activate the process gas, and a buffer part is configured to form a buffer chamber accommodating at least a part of the plasma generation unit and include a gas supply hole through which the activated process gas is supplied to the substrate. The buffer part includes a groove portion in which a part of the gas supply hole is cut out.

公开/授权文献
0/0