The invention discloses a preparation method of a core-shell structure CuO/Al nanometer energetic film material. The method comprises the following steps: firstly, preparing a Cr transition layer and a Cu film on a substrate by using a vacuum physical vapor deposition technique; placing the substrate into a mixed solution containing NaOH and (NH4)2S2O8 at room temperature to obtain a Cu(OH)2 film material with a one-dimensional nanostructure; then, performing heat treatment to obtain a CuO film material with a one-dimensional nanostructure; lastly, coating the CuO one-dimensional nanostructure with nanometer Al by using the physical vapor deposition technique to obtain the core-shell structure CuO/Al nanometer energetic film material. The temperature is limited at 200 DEG C or less in a preparation process, the energy consumption is significantly lowered compared with an existing high-temperature treatment process in which the temperature is more than or equal to 450 DEG C, the prepared core-shell structure CuO/Al nanometer energetic film material can be compatible with a back-end CMOS (Complementary Metal-Oxide-Semiconductor Transistor) process, and the preparation process has high repetitiveness.