The invention discloses a read-decoupling storage unit based on a FinFET device. The read-decoupling storage unit comprises a writing word line, a writing bit line, an antiphase writing bit line, a reading word line, a reading bit line, a first FinFET, a second FinFET, a third FinFET, a fourth FinFET, a fifth FinFET, a sixth FinFET, a seventh FinFET, an eighth FinFET and a ninth FinFET, wherein the first FinFET, the second FinFET and the seventh FinFET are P-type FinFETs with low threshold values, the third FinFET, the fourth FinFET, the fifth FinFET, the sixth FinFET and the ninth FinFET are N-type FinFETs with low threshold values, and the eight FinFET is an N-type FinFET with a high threshold value. The read-decoupling storage unit has the advantages that under the condition of not influencing circuit performance, delay, power consumption and a power consumption delay product are all small, data values stored in memory points cannot be damaged during reading operation, and storage results and circuit functions are high in stability.