A formation method of a semiconductor structure comprises: providing a substrate, wherein the substrate comprises a first area configured to form a first transistor and a second area configured to form a second transistor; forming a first stress layer and a second stress layer, wherein the surfaces of the top portions of the first stress layer and the second stress layer are higher than the surface of the substrate; forming a covering layer; and removing the covering layers having partial thickness on the opposite surfaces of the first stress layer and the second stress layer. After the covering layer is formed, the covering layer having partial thickness on the opposite surfaces of the first stress layer and the second stress layer are removed to enlarge a distance between the first stress layer and the second stress layer at two sides of an isolation structure, effectively improve the device performance problem caused by too short distance between adjacent stress layers and reduce the generation of the device short-circuit phenomenon. Besides, the covering layer having partial thickness is removed to remove the stacking defects formed at the surface of the covering layer on the opposite surfaces of the first stress layer and the second stress layer so as to improve the performances of the device of forming the semiconductor.