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发明公开
CN107492490A 半导体设备的成膜方法、氮化铝成膜方法以及电子装置 有权

半导体设备的成膜方法、氮化铝成膜方法以及电子装置
摘要：
本发明揭示一种半导体设备的成膜方法、半导体设备的氮化铝成膜方法以及电子装置。本发明的半导体设备的成膜方法，包括进行溅射流程，该溅射流程包括下列步骤：将基板载入腔室内，并放置于腔室内的承载底座上；在基板加载至腔室的状况下，对腔室进行加热工艺，将腔室内的温度加热至高于或等于预定温度；利用设置于腔室内的靶材对基板进行主溅射，以在基板上形成薄膜；将基板载出该腔室。本发明的半导体设备的成膜方法、半导体设备的氮化铝成膜方法以及电子装置能够提升薄膜的质量，且具有制作流程简单、制作成本低等特点，能够避免基板在其它的加热腔室加热之后在传递至溅射腔室的过程中产生微粒落在基板上的问题，并达到提升电子装置效能的目的。
摘要（英）：

The invention discloses a semiconductor equipment film forming method, a semiconductor equipment aluminum nitride film forming method and an electronic device. The semiconductor equipment film forming method comprises a sputtering process. The sputtering process comprises the following steps: a substrate is loaded to a chamber and is placed on a bearing base in the chamber; in a condition in which the substrate is loaded to the chamber, a heating process is carried out on the chamber and the temperature of the chamber rises to be higher than or equal to a predetermined temperature; a target material arranged in the chamber is used to carry out main sputtering on the substrate to form a thin film on the substrate; and the substrate is loaded out of the chamber. According to the semiconductor equipment film forming method, the semiconductor equipment aluminum nitride film forming method and the electronic device disclosed by the invention, the quality of the thin film can be enhanced, the making process is simple, the making cost is low, the problem that particulates generated during the process of transferring the substrate after being heated in other heating chambers to the sputtering chamber fall on the substrate can be avoided, and the purpose of enhancing the efficiency of the electronic device can be achieved.

公开/授权文献
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02 .半导体器件或其部件的制造或处理
H01L21/04 ..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18 ...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30 ....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31 .....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/314 ......无机层（H01L21/3105，H01L21/32优先）
H01L21/318 .......由氮化物组成的无机层
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