The invention discloses an ultraviolet LED light source flip-chip structure, which comprises a substrate, a buffer and nucleation layer, a superlattice structure, an n-type conductive layer, a quantum well active area, an electron blocking layer, a p-type conductive layer, a current spreading layer and a metal reflective layer, wherein the buffer and nucleation layer, the superlattice structure, the n-type conductive layer, the quantum well active area, the electron blocking layer, the p-type conductive layer, the current spreading layer and the metal reflective layer are arranged in the first direction in order. The structure also comprises a first electrode recess penetrating the metal reflective layer and a portion of the current spreading layer, a second electrode recess penetrating the n-type conductive layer, the quantum well active region, the electron blocking layer, the p-type conductive layer, the current spreading layer and the metal reflective layer, a p electrode in contact with the first electrode recess, an n electrode in contact with the second electrode recess, and an annular metal strip structure disposed on a side of an epitaxial layer structure facing away from the substrate, wherein the annular metal strip structure annually wraps the p electrode and the n electrode, and is connected with the p electrode and not connected with the n electrode. The ultraviolet LED light source flip-chip structure is advantaged by high luminous efficiency, static release hazard resistance, fast heat dissipation, aging resistance and high reliability.