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CN107507914B 一种用于相变存储器的GeSb基掺氮纳米薄膜材料及其制备方法 有权

一种用于相变存储器的GeSb基掺氮纳米薄膜材料及其制备方法
Abstract:
本发明公开了一种用于相变存储器的GeSb基掺氮纳米薄膜材料及其制备方法，材料的化学组成通式为（Ge10Sb90）xN1‑x，其中x=0.68、0.63、0.60。本发明的制备方法通过控制磁控溅射时通入的氮气流量来控制GeSb基掺氮纳米薄膜材料中氮元素的含量，氮元素的含量能够得到精确的控制。
Abstract(English):

The invention discloses a GeSb-based nitrogen-doped nano-film material for a phase change memory and a preparation method of the nano-film material. The chemical composition general formula is (Ge10Sb90)xN(1-x), wherein x is equal to 0.50-0.90. Compared with the conventional Ge2Sb2Te5 phase change film material, the GeSb-based nitrogen-doped nano-film material is higher in crystallization speed, so as to greatly improve the storage speed of PCRAM; in addition, the GeSb-based nitrogen-doped nano-film material is higher in crystallization temperature and activation energy, so as to greatly improve the stability of PCRAM.

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