The invention discloses a method for measuring an internal signal of a through silicon via (TSV) package chip. The method comprises the following steps of S1, grinding and polishing a back surface ofa TSV package chip to be measured so as to expose TSV through holes and a silicon substrate; S2, depositing a SiO2 thin film region on the silicon substrate far from away edges of the TSV through holes with a distance so as to isolate the silicon substrate; S3, cleaning surfaces of the TSV through holes; S4, depositing metal Pt between chips below the TSV through holes and a SiO2 thin film; S5, depositing a test plate on the SiO2 thin film; and S6, employing a probe to be in contact with a test plate so that a test force is applied to the chips and measurement on the internal signals of the chips is achieved. The method is simple and easy to operate, connection and test of the probe are facilitated, meanwhile, the problem that the signal cannot be applied to the TSV through holes due to contact of the probe and the silicon substrate during the probe test process is prevented, so that the test efficiency and accuracy are remarkably improved.