The invention discloses a tunneling magnetoresistance device driven by magnetic phase transformation. The tunnel magnetoresistance device comprises a substrate, a bottom electrode, a tunneling layer and a top electrode which are sequentially superposed, wherein the bottom electrode has ferromagnetic phase transformation; the bottom plate is made of an Fe-Rh alloy or an Fe-Ga alloy; the thickness of the bottom electrode is greater than 3nm; the bottom electrode and the tunneling layer are further provided with an insertion layer therebetween; the insertion layer is made of paramagnetic metal. According to the invention, the tunneling magnetoresistance device is prepared by using metal with ferromagnetic phase transformation at one side of the tunneling layer, and the tunneling magnetoresistance device is enabled to realize more than 10% of a magnetoresistance effect at a room temperature through using great changes of the metallic state density in ferromagnetic phase transformation; andthe polarity and the magnitude of the magnetoresistance of the device can be controlled through the thickness of the interface insertion layer.