The invention relates to a trench gate IGBT device with high anti-short circuit capability and a preparation method thereof. A cell in a cell region comprises two adjacent cell trenches. A first bodyregion of a second conductivity type is arranged above adjacent outer side walls of two adjacent cell trenches. The first body region of the second conductivity type contacts the side wall of the corresponding cell trench. A first conductivity type source region is arranged above the outer side walls, which are spaced apart from each other, of two adjacent cell trenches. The first conductivity type source region contacts the side wall of the corresponding cell trench. When the first body region of the second conductivity type is manufactured, a lithography plate injected into the first conductivity type source region is simply adjusted. Without affecting the withstand voltage and the parasitic capacitance of the IGBT device, the channel density of the trench gate IGBT is reduced. Saturation current is reduced. The short circuit resistance of the trench gate IGBT device is effectively improved. The trench gate IGBT device has the advantages of compact structure and being safe and reliable, and is compatible with the existing technology.