The present invention relates to a preparation method of a front metal electrode structure of a crimping IGBT (Insulated Gate Bipolar Transistor) device. The method comprises the following steps of: the step 1, providing an IGBT wafer with a front cellular structure; the step 2, bonding a metal deposition substrate on a connection metal electrode layer; the step 3, depositing required metal abovethe metal deposition substrate, wherein the deposited metal is electrically connected with the connection metal electrode layer through a metal deposition pattern; the step 4, separating the metal deposition substrate from the connection metal electrode layer; and the step 5, preparing a required passivation layer at the front surface of the IGBT wafer. The preparation method of a front metal electrode structure of a crimping IGBT device is simple in processing steps, is compatible with a current process, can effectively achieve preparation of the crimping metal electrode layer at the front ofthe crimping IGBT device, can omit a photoetching manufacturing procedure of the crimping metal electrode layer on the crimping IGBT device, can effectively shorten the manufacturing cycle of the crimping IGBT device, can reduce the manufacturing cost, and is safe and reliable.