The invention discloses a semiconductor device and a method of manufacturing the same. The semiconductor device includes a base substrate, a first transistor including a first semiconductor pattern, afirst control electrode, a first input electrode, and a first output electrode, each of which is disposed on the base substrate, a second transistor including a second semiconductor pattern, a secondcontrol electrode, a second input electrode, and a second output electrode, and a plurality of insulating layers. A single first through part exposes the first control electrode and the first semiconductor pattern disposed on both sides of the first control electrode.