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发明公开
CN108091646A 紫外LED抗静电硅基板的封装结构 有权

紫外LED抗静电硅基板的封装结构
摘要：
一种紫外LED抗静电硅基板的封装结构，包括：一硅基板，该硅基板是用间隔槽隔离出正极、负极和自由极，所述正极位于硅基板上面的一侧，所述负极和自由极位于硅基板上面的另一侧；一稳压二极管，其制作在正极部分的硅基板上；一紫外LED芯片，其倒装在硅基板，并与正极、负极和自由极连接；一陶瓷管壳，所述硅基板制作在陶瓷管壳上，所述基板的正极与陶瓷管壳的正极连接，所述硅基板的负极与陶瓷管壳的负极连接；一盖片，其封盖在陶瓷管壳上。本发明可提高自身抗静电能力，有效的保护紫外LED，结构简化，降低成本。
摘要（英）：

The invention provides an ultraviolet LED antistatic silicon substrate package structure. The ultraviolet LED antistatic silicon substrate package structure comprises a silicon substrate, a zener diode, an ultraviolet LED chip, a ceramic tube casing and a cover sheet. The silicon substrate is separated into a positive electrode, a negative electrode and a free electrode by gap grooves. The positive electrode is located on the upper side of the silicon substrate. The negative electrode and the free electrode are located on the other side of the silicon substrate. The zener diode is fabricated on the silicon substrate of the positive electrode part. The ultraviolet LED chip is flip-chip mounted on the silicon substrate, and is connected with the positive electrode, the negative electrode andthe free electrode. The silicon substrate is fabricated on the ceramic tube casing. The positive electrode of the substrate is connected with the positive electrode of the ceramic tube casing. The negative electrode of the silicon substrate is connected with the negative electrode of the ceramic tube casing. The cover sheet covers the ceramic tube casing. According to the invention, the antistatic capacity of the ultraviolet LED antistatic silicon substrate package structure can be improved; an ultraviolet LED is effectively protected; the structure is simplified; and the cost is reduced.

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