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发明公开
CN108198821A 阵列基板及其制备方法、显示装置 无效 - 撤回

阵列基板及其制备方法、显示装置
摘要：
本发明公开了一种阵列基板，包括形成于衬底基板上的像素结构，所述像素结构设置有晶体管区和像素区，所述像素结构包括：透明电极层，其包括数据线、源电极、漏电极和像素电极，所述源电极和漏电极位于晶体管区中并相互绝缘，所述数据线电性连接到漏电极，所述像素电极位于像素区中并电性连接到源电极；铜金属层，沉积在所述数据线和漏电极上；半导体有源层，形成在所述源电极和漏电极之间并分别连接所述源电极和漏电极；栅极绝缘层，覆设于所述透明电极层、铜金属层以及半导体有源层上；相互电性连接的栅极线和栅电极，形成于所述栅极绝缘层上。本发明还公开了如上所述阵列基板的制备方法以及包含该阵列基板的显示装置。
摘要（英）：

The invention discloses an array substrate, which comprises a pixel structure formed on a substrate, a copper metal layer, a semiconductor active layer, a gate insulation layer, a gate line and a gateelectrode, wherein the pixel structure is provided with a transistor area and a pixel area; the pixel structure comprises a transparent electrode layer; the transparent electrode layer comprises a data line, a source electrode, a drain electrode and a pixel electrode; the source electrode and the drain electrode are located in the transistor area and are insulated with each other; the data line is electrically connected to the drain electrode; the pixel electrode is located in the pixel area and electrically connected to the source electrode; the copper metal layer is deposited on the data line and the drain electrode; the semiconductor active layer is formed between the source electrode and the drain electrode and connected with the source electrode and the drain electrode separately; the gate insulation layer covers the transparent electrode layer, the copper metal layer and the semiconductor active layer; and the gate line and the gate electrode are electrically connected with eachother and are formed on the gate insulation layer. The invention further discloses a preparation method of the array substrate and a display device comprising the array substrate.

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