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发明授权
CN108269866B 一种混合极性InGaN太阳能电池结构 有权

一种混合极性InGaN太阳能电池结构
摘要：
本发明提供了一种混合极性InGaN太阳能电池结构，其包括：n型GaN层、i区光吸收层、p型GaN层、分别镀在n型GaN层和p型GaN层表面的金属电极；i区光吸收层位于n型GaN层的上面，p型GaN层位于i区光吸收层的上面；其中，n型GaN层、i区光吸收层的极性为Ga面极性、p型GaN层的极性为N面极性，太阳光由上表面入射到太阳能电池结构。本发明使得极化效应不会阻碍光生载流子的分离和输运，以得到高效的InGaN太阳能电池。
摘要（英）：

The present invention provides a hybrid-polarity InGaN solar cell structure, and the structure comprises an n-type GaN layer, an i-region light absorbing layer, a p-type GaN layer, and metal electrodes which are respectively plated on the surfaces of the n-type GaN layer and the p-type GaN layer. The i-region light absorbing layer is located on the n-type GaN layer, and the p-type GaN layer is located on the i-region light absorbing layer. The polarity of the n-type GaN layer and the polarity of the i-region light absorbing layer are Ga plane polarity, and the polarity of the p-type GaN layeris N plane polarity. The sunlight irradiates the structure from the upper surface. The structure enables a polarization effect not to hinder the separation and transportation of photo-induced carriers, so as to obtain a high-efficiency InGaN solar cell.

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