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发明授权
CN108374167B 一种水热法制备Cu2O纳米薄膜的方法 有权

一种水热法制备Cu2O纳米薄膜的方法
摘要：
本发明公开了一种水热法制备Cu2O纳米薄膜的方法。（1）取5.00 mL浓度为0.005~0.2 mol/L H2O2溶液与10.00 mL无水乙醇混合均匀放入20 mL反应釜中；（2）将规格1.5 cm×2.5 cm×0.1 cm的Cu片放入步骤（1）反应釜中并在90~180℃下反应1~12小时，即在Cu片上获得光电压值0.0821~0.2574 V的Cu2O纳米薄膜。本发明利用Cu片先氧化后还原合成Cu2O薄膜的水热法是首创的，Cu2O薄膜的光电压达0.2574V，具有优良的光电性能；此方法制备Cu2O薄膜，对原料及仪器要求不高、工艺简单、周期短，生产过程绿色环保，产品光电性能优良。
摘要（英）：

The invention discloses a method for preparing a Cu2O nanofilm by a hydrothermal method. The method comprises the steps: (1) taking 5.00 mL of 0.005 to 0.2 mol/L H2O2 solution and 10.00 mL of absoluteethyl alcohol, evenly mixing and putting into a 20mL reaction kettle; (2) putting a Cu piece with the specification of 1.5cm*2.5cm*0.1cm into the reaction kettle in the step (1), and reacting for 1 to 12 hours under 90 to 180 DEG C to obtain the Cu2O nanofilm with a photovoltage value of 0.0821 to 0.2574 V on the Cu piece. According to the method disclosed by the invention, the hydrothermal method to oxidize the Cu piece and then reduce the Cu piece to synthesize the Cu2O film is disclosed for the first time; photovoltage of the Cu2O film can reach 0.2574V, and the Cu2O film has excellent photoelectric property; the method for preparing the Cu2O film has the advantages of not high requirements on raw materials and instruments, simple technology, short period and environment-friendly production process; photoelectric property of products is excellent.

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