The invention discloses a test method of semiconductor-insulator interface state density and a capture cross-section. The method includes the following steps that (1) an insulator film is grown on thesurface of a semiconductor slice, then a metal film is grown on the surface of the insulator film, and then an MIS device of a metal-insulator-semiconductor structure is produced; (2) capacitance transient tests of the MIS device are conducted at different testing temperatures T, and variations of capacitance in the launching process of a current carrier are obtained and transferred to transientcapacitance of electric charge Nit; (3) the electric charge Nit takes a derivative about time t, and the emission rate ep of the electric charge is obtained at different testing temperatures; and (4)in different electric charge density, the function of 1n(ep/T2) about 1/T is made, and distribution of the interface state density and the capture cross-section with the energy level are obtained by aslope and an intercept correspondingly. By using the test method of the semiconductor-insulator interface state density and the capture cross-section, distribution of the capture cross-section and the interface state density with the energy level position is obtained, and application is wide.