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发明公开
CN109273477A CMOS-TDI图像传感器及其形成方法 有权

CMOS-TDI图像传感器及其形成方法
摘要：
一种CMOS-TDI图像传感器及其形成方法，其中，CMOS-TDI图像传感器包括：基底，所述基底包括若干个像素区；位于各个所述像素区基底内的若干个相互分立的第一掺杂区；位于各个像素区基底表面的第一栅极结构，所述第一栅极结构横跨若干个第一掺杂区。利用所述CMOS-TDI图像传感器能够提高电荷传输效率，改善图像质量。
摘要（英）：

provided are a CMOS-TDI image sensor and forming method thereof, wherein the CMOS-TDI image sensor includes a substrate including a plurality of pixel region; A plurality of mutually discrete first doped regions located within a substrate of each of the pixel regions; A first gate structure located on a substrate surface of each pixel region, the first gate structure spanning a plurality of firstdoped regions. The advantage of that CMOS-TDI image sensor can improve charge transfer efficiency and image quality.

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