The application discloses an indium gallium nitrogen bismuth material, a laser and a detector using the material, and a preparation method of the material, relating to a semiconductor material. The indium gallium nitrogen bismuth material comprises a substrate layer, a buffer layer, and the indium gallium nitrogen bismuth material, wherein the indium gallium nitrogen bismuth material is formed bysimultaneously incorporating indium atoms and bismuth atoms into GaN alloy, which can adjust the lattice constant and electronic properties of the matrix to improve the luminous efficiency. The application effectively adjusts the forbidden band width of the GaN material by adjusting the incorporated concentration of the indium atoms and germanium atoms, which realizes coverage from the visible light to the near-infrared band and is applied to the optoelectronic device. The co-doping of indium atoms and germanium atoms makes the material easier to grow and more stable. The application can be grown by various methods such as conventional molecular beam epitaxy and metal organic chemical vapor deposition, and the structure and operation process are simple and easy to control.