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发明公开
CN109817564A 用于半导体器件中的噪声隔离的结构和方法 有权

用于半导体器件中的噪声隔离的结构和方法
摘要：
本发明实施例涉及半导体结构，半导体结构包括具有顶面的衬底以及形成在衬底的顶面上的第一和第二器件。半导体结构也包括形成在衬底中以及第一和第二器件之间的深隔离结构。深隔离结构包括形成在顶面处并且具有顶部宽度的顶部部分以及具有大于顶部宽度的底部宽度的底面。本发明实施例涉及用于半导体器件中的噪声隔离的结构和方法。
摘要（英）：

The present disclosure relates to a semiconductor structure, including a substrate with a top surface and first and second devices formed on the top surface of the substrate. The semiconductor structure also includes a deep isolation structure formed in the substrate and between the first and second devices. The deep isolation structure includes a top portion formed at the top surface and having atop width and a bottom surface having a bottom width larger than the top width. Embodiments of the invention also relate to structures and methods for noise isolation in semiconductor devices.

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