The invention discloses a high-efficiency mass production preparation method of dry method black silicon wafers. The method comprises the following steps of 1, removing a damaged layer: removing the damaged layer on the surface of the silicon wafer by acid corrosion or alkali corrosion; 2, cleaning: cleaning the silicon wafer with the damaged layer removed so as to remove the surface porous silicon and the residual liquid; 3: phosphorus diffusion impurity absorption: forming a heavily doped region on the surface of the silicon wafer obtained in the step 2 by the concentrated phosphorus diffusion so as to absorb impurities in the silicon wafer; 4, removing the diffusion impurity absorption layer: removing the diffusion impurity absorption layer by alkali corrosion; 5, preparing the black silicon wafer: preparing the black silicon wafer by an RIE black silicon process; and 6: modifying a textured surface: modifying the black silicon wafer having nanopores on the surface obtained in the step 5 to obtain the black silicon wafer. The method achieves low cost and is suitable for mass production, can significantly improve the quality of the silicon wafer, thereby improving the efficiencyof a polycrystalline battery and enhancing the market competitiveness of a polycrystalline product.