The invention provides a semiconductor process method. The semiconductor process method comprises the following steps: carrying out ion implantation on a to-be-processed material layer; forming an iondiffusion barrier layer on the surface of the to-be-processed material layer after ion implantation; and carrying out annealing treatment on the to-be-processed material layer with the ion diffusionbarrier layer formed on the surface. According to the invention, an ion diffusion barrier layer is firstly formed on the surface of the to-be-processed material layer after ion implantation, annealingtreatment is then performed on the to-be-processed material layer after ion implantation, and in the annealing treatment process, the ion diffusion barrier layer can block diffusion of ions, so the ions are prevented from diffusing into a cavity of a rapid thermal annealing machine table, adhesion to the inner wall of the cavity of the rapid thermal annealing machine table is avoided, it can be ensured that a temperature detection device accurately detects the temperature in the cavity of the rapid thermal annealing machine table, and the rejection rate of products is reduced; and meanwhile,the maintenance frequency of the rapid thermal annealing machine table can be reduced and manpower and material resources are saved.