The invention relates to an anode short-circuit type lateral insulated gate bipolar transistor with a negative resistance effect being eliminated, which comprises a P-type substrate, wherein the P-type substrate is provided with an oxide buried layer, and the oxide buried layer is provided with an N-type drift region. The lateral insulated gate bipolar transistor is characterized in that the surface of the N-type drift region is provided with a silicon dioxide oxide layer, the N-type drift region is internally provided with an LIGBT (Lateral Insulated Gate Bipolar Transistor) and an NMOS (N-channel Metal Oxide Semiconductor), the LIGBT includes a first N-type heavily doped region, the first N-type heavily doped region is internally provided with a P-type heavily doped anode region, the NMOS includes a second N-type heavily doped region, the second N-type heavily doped region is internally provided with a P-type well region, the P-type well region is internally provided with an N-type heavily doped anode region in a surrounded manner, the second N-type heavily doped region is electrically connected with the P-type well region, the silicon dioxide oxide layer is internally provided with a polycrystalline silicon gate, the polycrystalline silicon gate crosses the P-type well region from an upper region of the N-type heavily doped anode region and enters an upper region of the second N-type heavily doped region, and the polycrystalline silicon gate is further connected with the N-type heavily doped anode region and the P-type heavily doped anode region.