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发明公开
CN110310886A 半导体装置的制造方法、基板处理装置以及存储介质 审中-实审

半导体装置的制造方法、基板处理装置以及存储介质
摘要：
本发明涉及一种半导体装置的制造方法、基板处理装置以及存储介质。本发明提供一种技术，在将液体原料气化来用作气化气体在基板上形成膜时，抑制排气管内的气化气体的热分解以及再液化。具有将第一工序、第二工序、第三工序、第四工序依次进行预定次数而在基板上形成膜的工序，第一工序是对容纳于反应管内的基板供给原料气体，第二工序是从连接于反应管的排气管排出残留于反应管内的原料气体，第三工序是对基板供给与原料气体反应的反应气体，第四工序是从排气管排出残留于反应管内的反应气体，至少在第一工序及第三工序中，将反应管的温度设定为不足原料气体的热分解温度且高于冷凝温度的温度即第一温度，将排气管的温度设定为第一温度的1.0倍以上且1.6倍以下即第二温度。
摘要（英）：

According to one aspect of the technique described herein, there is provided a technique including: forming a film on a substrate by performing a cycle a predetermined number of times, wherein the cycle includes sequentially performing: (a) supplying source gas to a substrate accommodated in a reaction tube; (b) exhausting the source gas remaining in the reaction tube through an exhaust pipe connected to the reaction tube; (c) supplying a reactive gas reacting with the source gas to the substrate; and (d) exhausting the reactive gas remaining in the reaction tube through the exhaust pipe, wherein at least in (a) and (c), a temperature of the reaction tube is set to a first temperature lower than a thermal decomposition temperature of the source gas and higher than a condensation temperature of the source gas and a temperature of the exhaust pipe is set to a second temperature equal to or higher than the first temperature.

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