The invention discloses a method for preparing a nitride LED with a vertical structure by using a graphene barrier layer. The method comprises the steps of introducing the graphene barrier layer withhigh crystal quality and symmetry of a hexagonal crystal structure into the upper surface of a monocrystal metal substrate; blocking interface reaction of the monocrystal metal substrate and the nitride LED and diffusion of metal atoms by using a strong covalent bond in the graphene barrier layer; lattice mismatch and thermal mismatch of the metal substrate and the nitride LED structure are relaxed by using a weak molecular force in the graphene barrier layer; and providing a nucleating site of the nitride LED through performing surface activating treatment on the graphene barrier layer, and thus acquiring the high power nitride LED with the vertical structure that is high in crystal quality and luminous efficiency. The method provided by the invention has the advantages of simplifying thepreparation technology of the nitride LED with the vertical structure, improving the crystal quality and luminous efficiency of the nitride LED, improving the heat dissipation capacity of the nitrideLED, and is low in cost, high in yield, simpleness in equipment operation, and suitable for industrial production.