The invention provides a beam shaping structure based on multiple stacks. The structure comprises a number of horizontally-spaced multi-stack structures. Each multi-stack structure comprises at leastn semiconductor laser stacks which are displaced in the vertical direction, wherein n is greater than and equal to 2. Each semiconductor laser stack comprises a number of laser bars arranged along theslow axis direction. The structure further comprises a self-polarizing beam combining prism which is arranged on the output optical path of each multi-stack structure and used to carry out polarizingand beam combining on beams output by the semiconductor laser stacks to acquire a primary output beam. The spot width of the primary output beam in the slow axis direction is reduced to half of the width of the output beams of the semiconductor laser stacks. The structure further comprises a shaping lens group which achieves beam rearrangement in the fast axis direction. According to the beam shaping structure, the mass of beams in the slow axis direction is reduced as much as half, and the mass of beams in the fast axis direction is unchanged. Compared with traditional methods, the beam shaping structure has the advantages of simple design, compact structure, convenient adjustment and low cost.